InGaAs MOS Gate Stack Formation and the MOS Interface Properties

Gate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

Gate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

Floating-gate Mos Synapse Transistors

Gate Tunnel Current in an MOS Transistor

A theoretical description of gate tunnel current in an MOS transistor is proposed, and the results of calculations for the case of an n-channel MOSFET with extremely thin gate oxides are given. A comparison of the gate tunnel current with the drain current is made.

Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack

The electrical behavior of decananometer MOS transistors with high-κ dielectric gate stack has been investigated using 2D numerical simulation. Two important electrostatic limitations of high-κ materials have been analyzed and discussed in this work: i) the gate-fringing field effects which compromise short-channel performance when simultaneously increasing the dielectric constant and its physi...